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this is information on a product in full production. january 2013 doc id 022826 rev 4 1/13 13 STY139N65M5 n-channel 650 v, 0.014 typ., 130 a, mdmesh? v power mosfet in max247 package datasheet ? production data features max247 worldwide best r ds(on) higher v dss rating higher dv/dt capability excellent switching performance easy to drive 100% avalanche tested applications switching applications description the device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v ds @t jmax r ds(on) max i d STY139N65M5 710 v 0.017 130 a 1 2 3 max247 !-v $ ' 3 table 1. device summary order code marking package packaging STY139N65M5 139n65m5 max247 tube www.st.com
contents STY139N65M5 2/13 doc id 022826 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STY139N65M5 electrical ratings doc id 022826 rev 4 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 130 a i d drain current (continuous) at t c = 100 c 78 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 520 a p tot total dissipation at t c = 25 c 625 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 17 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 2400 mj dv/dt (2) 2. i sd 130 a, di/dt = 400 a/s, v dd = 400 v, peak v ds < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.2 c/w r thj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STY139N65M5 4/13 doc id 022826 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 65 a 0.014 0.017 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 15600 365 9 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 1559 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 360 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.2 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 65 a, v gs = 10 v (see figure 15 ) - 363 88 164 - nc nc nc
STY139N65M5 electrical characteristics doc id 022826 rev 4 5/13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 80 a, r g = 4.7 , v gs = 10 v (see figure 16 ) (see figure 19 ) - 295 56 37 84 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 130 520 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 130 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 130 a, di/dt = 100 a/s v dd = 100 v (see figure 16 ) - 570 15 53 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 130 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16 ) - 720 24 68 ns c a
electrical characteristics STY139N65M5 6/13 doc id 022826 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x rd s (on) 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am12612v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth=k rthj-c =tp/ tp am09125v1 i d 150 100 50 0 0 10 v d s (v) (a) 5 15 200 250 5v 6v 8 v v g s =10v 3 00 7v am0 88 9 3 v2 i d 150 100 50 0 4 v g s (v) 6 (a) 3 5 7 200 250 3 00 v d s = 3 0v 8 9 am0 88 94v2 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 r d s (on) 0.012 0.011 0 40 i d (a) ( ) 20 60 0.01 3 v g s =10v 8 0 0.014 0.015 100 0.016 am1261 3 v1
STY139N65M5 electrical characteristics doc id 022826 rev 4 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. output capacitance stored energy figure 13. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. v g s 6 4 2 0 0 100 q g (nc) (v) 400 8 200 3 00 10 v dd =520v i d =65a 12 3 00 200 100 0 400 500 v d s (v) v d s am12614v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss 100000 am12615v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am0 88 99v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d = 65a v g s = 10v am0 8 900v1 e o ss 3 0 20 10 0 0 100 v d s (v) ( j) 400 40 200 3 00 50 60 500 600 70 am12616v1 e 3 000 2000 1000 0 0 20 r g ( ) ( j) 10 3 0 4000 5000 6000 40 i d = 8 0a v dd =400v t j =25c eon eoff 7000 8 000 am12617v1
test circuits STY139N65M5 8/13 doc id 022826 rev 4 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d !-v )d 6gs 6ds 6ds )d 6gs on 4delay off 4fall 4r i s e 4cros s over 6ds )d 6gs)t on off 4fall 4r i s e #onceptwaveformfor)nductive,oad4urn off
STY139N65M5 package mechanical data doc id 022826 rev 4 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STY139N65M5 10/13 doc id 022826 rev 4 table 8. max247 mechanical data dim. mm min. typ. max. a4.70 5.30 a1 2.20 2.60 b1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c0.40 0.80 d 19.70 20.30 e5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30
STY139N65M5 package mechanical data doc id 022826 rev 4 11/13 figure 20. max247 drawing 0094 33 0_rev_d
revision history STY139N65M5 12/13 doc id 022826 rev 4 5 revision history table 9. document revision history date revision changes 09-mar-2012 1 first release. 04-apr-2012 2 inserted new section 2.1: electrical characteristics (curves) . updated section 4: package mechanical data . 19-apr-2012 3 document promoted from preliminary data to production data. updated section 4: package mechanical data . 24-jan-2013 4 ? minor text changes ? modified: i ar e as values on table 2
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